| 摘要 |
PROBLEM TO BE SOLVED: To form a carrier injection part without damaging a guide layer in a III nitride based compound semiconductor laser. SOLUTION: In the semiconductor laser 100 comprising a sapphire substrate 1, an AlN buffer layer 2, an Si doped n-GaN layer 3, an Si doped n-Al<SB>0.1</SB>Ga<SB>0.9</SB>N clad layer 4, an Si doped n-GaN guide layer 5, an active layer 6 having an MQW structure of a GaN barrier layer 62 having a thickness of about 35Åand a well layer 61 of Ga<SB>0.95</SB>In<SB>0.05</SB>N having a thickness of about 35Å, an Mg doped p-GaN guide layer 7, an Mg doped p-Al<SB>0.25</SB>Ga<SB>0.75</SB>N layer 8, an Mg doped p-Al<SB>0.1</SB>Ga<SB>0.9</SB>N clad layer 9, an Mg doped p-GaN contact layer 10, an Ni electrode 11, and an Al electrode 12, a hole injection ridge B abutting on a resonance ridge A is formed to have a width substantially same as the width (w) of the Ni electrode 11. Since the p-layer 8 has a high aluminum composition and the etching rate thereof is low, the p guide layer 7 can be protected against damage at the time of etching. COPYRIGHT: (C)2004,JPO
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