| 摘要 |
PROBLEM TO BE SOLVED: To provide an easily manufactuable ferroelectric memory element wherein the nondestructive read of information is made possible, and the rewrite of the information is made unnecessary, and the problem of the fatigue of polarization and the deterioration of a memory holding property can be solved, too, and further, its memory cell can be miniaturized too. SOLUTION: By interposing a ferroelectric film between a gate electrode and an insulator, and by using the ferroelectric film to connect source and drain electrodes with each other, the ferroelectric memory element is obtained. Also, in the manufacturing method of the ferroelectric memory, after forming firstly a conductive film and an insulation film on its substrate, the ferroelectric film, the source electrode, and the drain electrode are formed secondly on the insulation film to form thereafter thirdly the gate electrode on the ferroelectric film. COPYRIGHT: (C)2004,JPO
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