发明名称 |
METHOD FOR CONTROLLING AUTO PRECHARGE START TIME OF DRAM |
摘要 |
PURPOSE: A method for controlling an auto precharge start time of a DRAM is provided, which controls the auto precharge start time of the DRAM by being synchronized to a frequency. CONSTITUTION: According to the method for controlling the auto precharge start time of a DRAM, tRAS or tWR of the above DRAM is converted into a unit clock cycle according to CAS latency of the above DRAM. Then, the auto precharge start time of the DRAM is controlled by being synchronized to the converted clock cycle. The above tRAS is a row active time, and the tWR is a minimum time enabling to write data to a memory cell of the DRAM safely.
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申请公布号 |
KR20030088956(A) |
申请公布日期 |
2003.11.21 |
申请号 |
KR20020026784 |
申请日期 |
2002.05.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JEONG BAE;NA, WON GYUN |
分类号 |
G11C11/4076;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/4076 |
代理机构 |
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主权项 |
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地址 |
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