METHOD FOR FABRICATING INSULATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating an insulation layer of a semiconductor device is provided to form a plurality of voids inside the insulation layer by applying radio frequency(RF) power including a short pulse wave so that an incomplete reaction occurs in a gas phase reaction process. CONSTITUTION: A semiconductor substrate(100) having an underlying structure(101) is loaded into deposition equipment. Source gas including a silicon component and reaction gas including an oxygen component are supplied to the deposition equipment. RF power including the short pulse wave is applied to cause an incomplete reaction in the gas phase reaction process. The incomplete gas phase reaction occurs while the short pulse wave in the RF power is applied so that the insulation layer(102) including nano particles(103) is deposited. While the short pulse wave in the RF power is not applied, the nano particles are oxidized to form nano voids inside the insulation layer.