发明名称 MAGNETIC RANDOM ACCESS MEMORY
摘要 PROBLEM TO BE SOLVED: To stabilize a write characteristic by adjusting a pulse waveform of a write current. SOLUTION: Setting data deciding supply/cut-off timing, amplitude, and its temporal variation (current waveform) of a write-word/bit-line-current is registered in a setting circuit 23. A write-current waveform control circuit 24 generates a write word line drive signal WWLDRV, write word line synch- signal WWLSNK, write bit line drive signal WBLDRV, and a write bit line synch-signal WBLSNK based on this setting data. A current waveform of the write word/bit line current is controlled for each chip or each memory cell array. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003331574(A) 申请公布日期 2003.11.21
申请号 JP20020140499 申请日期 2002.05.15
申请人 TOSHIBA CORP 发明人 IWATA YOSHIHISA;NAKAJIMA KENTARO
分类号 G11C11/15;G11C11/16;(IPC1-7):G11C11/15 主分类号 G11C11/15
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