发明名称 METHOD FOR WORKING SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a working method of a semiconductor wafer for reducing damage of the wafer in working and transfer of the thin film wafer and the wafer of a large diameter. SOLUTION: In a series of processes for bonding a protection adhesive tape 1 to a circuit surface of the semiconductor wafer 2, grinding a rear face of the wafer, thinning the wafer, bonding a reinforcing sheet 3 to the ground wafer rear face, bonding an adhesive sheet for dicing 4 to a reinforcing sheet side of the wafer, fixing the wafer to a ring frame 5 through the adhesive sheet for dicing and peeling the protection adhesive tape bonded to a surface of the wafer, a state where the wafer is reinforced by the protection adhesive tape, the reinforcing sheet or at least a part of a constitution layer of them is maintained. The wafer is diced and is made into chips. Then, the chips are picked up. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003332267(A) 申请公布日期 2003.11.21
申请号 JP20020134157 申请日期 2002.05.09
申请人 LINTEC CORP 发明人 HORIGOME KATSUHIKO;NAGAMOTO KOICHI;TAKAHASHI KAZUHIRO
分类号 H01L21/67;H01L21/301;H01L21/304;H01L21/58;H01L21/68;H01L21/683;(IPC1-7):H01L21/301 主分类号 H01L21/67
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