| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor wafer having an epitaxial layer that is prevented from thinning (peripheral sagging) at its peripheral part and highly improved in thickness uniformity and to provide a method of manufacturing the same. <P>SOLUTION: The method of manufacturing the semiconductor wafer comprises a single crystal ingot growing process STEP1, an external shape polishing process STEP2, a slicing process STEP3, flattening processes STEP4 to STEP6 of flattening the sliced wafer, and an epitaxial growth process STEP7 of growing an epitaxial layer at least on the one surface of the wafer. The diameter of the wafer subjected to the epitaxial growth process STEP7 is set larger than the desired diameter of a product, and then the wafer undergoes a process of removing its peripheral part until its diameter gets equal to the desired diameter of the product after the wafer is subjected to the epitaxial growth process STEP7. The process of removing the peripheral part of the wafer is carried out through a diameter reduction chamfering operation or a laser splitting (fusion) operation. <P>COPYRIGHT: (C)2004,JPO</p> |
