| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for mass producing a high optical quality light emitting element having an InGaAsN active layer economically by OMVPE. SOLUTION: A method for manufacturing a long wavelength light emitting element (100) comprises steps for arranging a substrate (220) supporting an InGaAsN film in an OMVPE reaction furnace (210), supplying a group III-V precursor substance mixture (214) containing arsine, dimethylhydrazine, alkyl gallium, alkyl indium and carrier gas where arsine and dimethylhydrazine are group V precursor substance materials and the percentage of dimethylhydrazine is substantially higher than the percentage of arsine to the reaction furnace, and applying such a pressure as a nitrogen concentration causing the emission of light having a wavelength longer than 1.2 μm is extracted from dimethylhydrazine and formed on a substrate to the reaction furnace (210). COPYRIGHT: (C)2004,JPO
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