发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To effectively use wiring channels of wiring formed by a damascene method. SOLUTION: In the case that a first cell 1 (0-1, 10-2, 10-3) is used, M1 power source wiring (101-1, 101-2, 102-3) is subjected to layout at a position isolated from a boundary of a cell, so that power source wiring is not combined between cells in layout of a semiconductor integrated circuit. As a result, width of the power source wiring is not changed. Since a rule regarding a gap to wiring adjacent to the wiring can be satisfied in accordance with width of the wiring, the number of wiring channels is not reduced. Hence, the providing ratio of wiring channels and the level of integration of a semiconductor chip are improved. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003332428(A) 申请公布日期 2003.11.21
申请号 JP20020133674 申请日期 2002.05.09
申请人 HITACHI LTD 发明人 OBAYASHI MASAYUKI;YOKOI TAKASHI
分类号 H01L21/3205;H01L21/82;H01L21/822;H01L23/52;H01L27/02;H01L27/04;H01L27/118;H01L31/0328;(IPC1-7):H01L21/82;H01L21/320 主分类号 H01L21/3205
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