| 摘要 |
PROBLEM TO BE SOLVED: To provide an etchant that selectively etches a hafnium based oxide film and a zirconium based oxide film with respect to a silicon oxide film such as THOX or TEOS. SOLUTION: An etchant that selectively etches an oxide film containing hafnium and silicon, an oxide film containing hafnium and aluminium, an oxide film containing zirconium and silicon, or an oxide film containing zirconium and aluminium with respect to a thermally oxidized film; a method for producing an etching material that etches materials to be etched on which the above oxide films and a silicon oxide film are formed; and the etching material obtained from the method are provided. COPYRIGHT: (C)2004,JPO
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