| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory, and its manufacturing method, in which stability and reliability of the memory are enhanced by shielding plasma charges and preventing them from being trapped by a memory cell. SOLUTION: A memory substrate 11 comprises a substrate 111, a memory cell 112, a peripheral circuit region 113, a first dielectric layer 114, and a first metal layer 115. The first dielectric layer 114 is formed in the memory cell region 112 and the peripheral circuit region 113, and the first metal layer 115 is formed on the first dielectric layer 114. An insulation layer 12 is formed on the memory substrate 11 and the first dielectric layer 114 not covered with the first metal layer 115. A shield metal layer 13 is formed on the insulation layer 12 above the memory cell region 112. A second dielectric layer 14 is formed on the shield metal layer 13, the insulation layer 12 not covered with the shield metal layer 13, and the first metal layer 115 not covered with the shield metal layer 13 and the insulation layer 12. A second metal layer 15 is formed on the second dielectric layer 14. COPYRIGHT: (C)2004,JPO
|
