| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device, forming conductive silicon films of a predetermined pattern which are provided with a required resistance value. SOLUTION: Heat treatment for activating impurities in respective polycrystalline silicon films, which become gate electrodes 3a and resistance elements 3b, is effected under a condition that respective polycrystalline silicon films are coated with an oxide film 7 after implanting the impurities into the polycrystalline silicon films respectively. In this case, the concentration of impurities in respective polycrystalline silicon films is regulated by controlling the thickness of the oxide film 7. According to this method, the degree of activation of the impurities is regulated. COPYRIGHT: (C)2004,JPO
|
