| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory device which can store information by accumulating charges in a charge accumulation layer consisting of an insulation layer in order to assure dielectric strength between a source and a drain even when the effective channel length is short and also provide a method of manufacturing the same non-volatile semiconductor memory device. SOLUTION: The non-volatile semiconductor memory device comprises a semiconductor substrate 10 on which a groove 16 is formed at the surface thereof, an impurity diffusing region 24 formed on the surface of the semiconductor substrate 10 other than the region where the groove 16 is formed, an impurity diffusing region 26 which is formed within the semiconductor substrate 10 at the bottom part of the groove 16 in the width narrower than the groove 16, a charge accumulation layer 28 consisting of an insulation layer formed at least along the internal surface of the groove 16, and a conductive layer 36 formed on the charge accumulation layer 28 between the impurity diffusion region 24 and impurity diffusing region 26. COPYRIGHT: (C)2004,JPO
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