| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method which uses nano imprint lithography and is reformed so as to improve a mold and a resist in solubility. SOLUTION: A two-layered resist layer composed of an upper film 3 and a lower film 2 is formed on a board 4. The mold 1 where a pattern has been provided is pressed against the resist layer. The board 4 is dipped into a solvent, which dissolves the upper layer 3, to dissolve the upper film 3 as the mold 1 is pressed against the resist layer. The mold 1 is separated from the board 4. By this invention, the resist layer has a two-layered structure, and the upper film is dissolved into the solvent as the mold 1 is pressed against the resist layer, whereby the mold 1 is capable of improving its releasability and service life, and a pattern having a high aspect ratio can be easily formed. COPYRIGHT: (C)2004,JPO
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