| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved planer type metal semiconductor field effect transistor (MESFET) which can handle large power capacity. SOLUTION: A planar MESFET has a plurality of FET elements (1, 2). Each FET element has a planar channel (351) to be doped, a source (301) and a drain (302) connected to the end of the channel (351). A gate semiconductor (51) is extended at a first predetermined distance (L1), from a drain (302) on the part of the channel region (351), at a position between the source (301) and the drain (302). A field plate (340) is connected to a gate semiconductor (51), extending by a second distance (L2) toward the drain (302), and is isolated from the channel (351) via dielectric materials (318, 340) except the connecting part with the gate semiconductor (51). COPYRIGHT: (C)2004,JPO |
