| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To shorten a read sampling measuring time after deterioration of nonvolatile memory cells. <P>SOLUTION: A nonvolatile memory circuit is provided with a second transistor N2 being in relation for current mirror connection for a first transistor N1-Nn connected to each bit line 12. Thereby, a characteristic of a nonvolatile memory cell can be expressed in a pseudo state, measuring read speed can be performed by an arbitrary memory cell on-state. Further, a semiconductor integrated circuit provided with a memory cell on-state measuring circuit measuring a value of an on-state of a memory cell. <P>COPYRIGHT: (C)2004,JPO</p> |
