INTERNAL POWER VOLTAGE GENERATING CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE, AND METHOD FOR CONTROLLING INTERNAL POWER VOLTAGE

摘要

PROBLEM TO BE SOLVED: To provide an internal power voltage generating circuit for a non- synchronous semiconductor memory device and a method for controlling internal power voltage.

SOLUTION: In a method for controlling internal power voltage for a non- synchronous semiconductor memory device, current sink-paths required for operating a driver stage generating internal power voltage making a level of the reference voltage as a target is provided as a plurality of paths, at least one current sink-path out of the paths is controlled by an active operation detecting signal.

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