| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technology to reduce a manufacturing cost of a resin sealed diode. <P>SOLUTION: A first electrode 2 (anode electrode) and a fourth electrode 11b of a pn junction element section 15 formed on a semiconductor wafer are connected by a gold wire 16. In a state of a wafer, the pn junction element sections 15 including the gold wires 16, and the fourth electrodes 11b are sealed by resin 17. Then, a molded section 18 is cut by a dicing saw 19 into individual resin sealed diodes 21. A cathode electrode and the anode electrode are extracted by a third electrode 11a and the fourth electrode 11b formed on a rear face of the resin sealed diode 21 without using a lead frame. <P>COPYRIGHT: (C)2004,JPO</p> |
