| 摘要 |
PROBLEM TO BE SOLVED: To materialize accurate exposure by controlling the angle of incidence of EUV light impinging on a reflection type mask in an exposure method and an exposure system of using light reflected from the reflection type mask while the reflection type mask is irradiated with the EUV light. SOLUTION: In the exposure method and the exposure system of irradiating a wafer 9 with the EUV light reflected from the reflection-type mask 4 while the reflection type mask 4 is irradiated at a prescribed angle with the EUV light emitted from an EUV light source 1, a change in an angle of incidence of the EUV light impinging on the reflection-type mask 4 is detected, an angle of incidence of the EUV light impinging on the reflection-type mask 4 is corrected on the basis of the detected change of the angle of incidence to carry out an exposure operation. COPYRIGHT: (C)2004,JPO
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