| 发明名称 |
SOLID-STATE IMAGE PICKUP DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a stable, high-reliability, thin and high-withstand-voltage solid-state image pickup device which does not change over time by hot electron and to provide a method for manufacturing a high-reliability solid-state image pickup device which can be easily manufactured. <P>SOLUTION: A photoelectric transfer part 12 which is formed on a semiconductor substrate 10 and a gate oxide film of a transfer path of a charge transfer device (CCD) in the proximity to the photoelectric transfer part 12 are composed of a multilayer film of a silicon oxide film (SiO) 15 and a silicon nitride film (SiN) 16. At least an end of the gate oxide film 15 on the side of the photoelectric transfer part 12 forms a monolayer gate oxide film which does not contain the silicon nitride film 16. <P>COPYRIGHT: (C)2004,JPO</p> |
| 申请公布号 |
JP2003332556(A) |
申请公布日期 |
2003.11.21 |
| 申请号 |
JP20020141736 |
申请日期 |
2002.05.16 |
| 申请人 |
FUJI FILM MICRODEVICES CO LTD;FUJI PHOTO FILM CO LTD |
发明人 |
OKAMOTO HIDEKAZU;TANAKA SHUNSUKE;UIE SHINJI |
| 分类号 |
H01L21/00;H01L21/336;H01L27/148;H01L29/768;H01L47/00;(IPC1-7):H01L27/148 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
