| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor element having a silicon nitride film having sufficient capability as a protective film, and to provide a method for manufacturing the same. <P>SOLUTION: The method for manufacturing the compound semiconductor element comprises steps of forming a groove 9 to form the side face of a chip body by mesa etching or half dicing, and then forming a silicon nitride film (SiN film) as a protective film so as to coat the upper surface and the side face of the chip body by a plasma CVD method. In this method, the silicon nitride film has a refractive index of a range of 1.80 to 1.90 and a hydrogen content of less than 20%. <P>COPYRIGHT: (C)2004,JPO |
