| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which warp is suppressed. <P>SOLUTION: A semiconductor device composed of a semiconductor substrate and a metal film applied to at least one side thereof entirely or partially and having warp caused by a heat history during a manufacturing process is cooled and then heated thus reducing the warp. <P>COPYRIGHT: (C)2004,JPO</p> |
