| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose on-resistance is reduced with high breakdown strength by improving the structure of a drift region which is depleted in an OFF mode. SOLUTION: A drain/drift region 190 is configured as a stripe-shaped parallel structure where stripe-shaped n-type divided drift path regions 1 and stripe- shaped p-type compartment regions 2 are alternately arrayed on a plane. One- side edges of a plurality of n-type divided drift path regions 1 are pn-joined to a p-type channel diffusion region 7, and the other edges are connected to an n<SP>+</SP>-type drain region 9 so that a drift path group 100 connected in parallel can be formed so as to be branched from the n<SP>+</SP>-type drain region 9 side. When widths of the n-type divided drift path region 1 and the p-type compartment region 2 are turned to be 1μm or less respectively, drastic low on-resistance can be obtained. COPYRIGHT: (C)2004,JPO |
