| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to be capable of preventing short between an upper and lower electrode and simultaneously forming the upper and lower electrode into the same size for improving the degree of integration. CONSTITUTION: After sequentially depositing a lower electrode metal layer, a dielectric material layer, and an upper electrode metal layer at the upper portion of a substrate(30), the first and second hard mask material layer are sequentially deposited on the upper electrode metal layer. Then, a photoresist pattern is formed on the second hard mask material layer for forming a capacitor. The second hard mask, the first hard mask, an upper electrode(40b) are formed by selectively etching the resultant structure using the photoresist pattern as an etching mask. Then, a dielectric layer(39b) is formed by selectively etching the dielectric material layer using the second hard mask as an etching mask. A lower electrode(38a) is then formed by selectively etching the lower electrode metal layer using the first hard mask as an etching mask.
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