Ldmos transistor device, integrated circuit, and fabrication method thereof

摘要

An integrated LDMOS transistor comprises a semiconductor substrate ( 11 ), an LDMOS gate region ( 17 ), LDMOS source ( 14 ) and drain ( 15 ) regions, and a channel region ( 13 ) arranged beneath the LDMOS gate region, where the channel region interconnects the LDMOS source and drain regions. The LDMOS gate region comprises first ( 18 a) and second ( 18 b) gate insulation layer regions, a centrally located gate-dividing insulation region ( 19 ) provided between the first and second gate insulation layer regions, and first ( 20 a) and second ( 20 b) individual gate conducting layer regions, each being provided on top of a respective one of the first and second gate insulation layer regions, and each being an etched outside spacer region at the centrally located insulation layer region.