发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING DATA LOAD SIGNAL EXTERNALLY AND PREFETCH METHOD OF SERIAL DATA INTO PARALLEL DATA OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A semiconductor memory device is provided, which has a data load signal externally indicating the conversion of serial data into parallel data, and a prefetch method of serial data into parallel data of the same semiconductor memory device is also provided. CONSTITUTION: According to the semiconductor memory device having a data load signal externally, a parallel loader signal generation circuit(550) receives the above data load signal in response to a data strobe signal and generates a parallel loader signal after a fixed time. And a data latch circuit(540) receives data in response to the above data strobe signal and then arranges them in parallel, and latches the parallel-arranged data in response to the parallel loader signal.
申请公布号 KR20030089181(A) 申请公布日期 2003.11.21
申请号 KR20020027277 申请日期 2002.05.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JANG, SEONG JIN;KWAK, JIN SEOK
分类号 G06F12/00;G06F13/16;G11C7/10;G11C11/407;G11C11/409;G11C11/4096;(IPC1-7):G11C11/409 主分类号 G06F12/00
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