发明名称 |
SEMICONDUCTOR MEMORY DEVICE HAVING DATA LOAD SIGNAL EXTERNALLY AND PREFETCH METHOD OF SERIAL DATA INTO PARALLEL DATA OF SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A semiconductor memory device is provided, which has a data load signal externally indicating the conversion of serial data into parallel data, and a prefetch method of serial data into parallel data of the same semiconductor memory device is also provided. CONSTITUTION: According to the semiconductor memory device having a data load signal externally, a parallel loader signal generation circuit(550) receives the above data load signal in response to a data strobe signal and generates a parallel loader signal after a fixed time. And a data latch circuit(540) receives data in response to the above data strobe signal and then arranges them in parallel, and latches the parallel-arranged data in response to the parallel loader signal.
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申请公布号 |
KR20030089181(A) |
申请公布日期 |
2003.11.21 |
申请号 |
KR20020027277 |
申请日期 |
2002.05.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG, SEONG JIN;KWAK, JIN SEOK |
分类号 |
G06F12/00;G06F13/16;G11C7/10;G11C11/407;G11C11/409;G11C11/4096;(IPC1-7):G11C11/409 |
主分类号 |
G06F12/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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