METHOD FOR MEASURING ECCENTRICITY OF SEMICONDUCTOR EXPOSURE EQUIPMENT

摘要

PURPOSE: A method for measuring eccentricity of semiconductor exposure equipment is provided to measure eccentricity of a light source by measuring asymmetry of critical dimension(CD) between photoresist layer patterns formed by an exposure process and a development process using a phase shift mask(PSM) with a phase difference of 0 degree and 90 degrees. CONSTITUTION: A photoresist layer is formed on a wafer. A photoresist layer pattern is formed through an exposure and development process using the PSM with a phase difference of 0 degree and 90 degrees. The asymmetry of CD between the photoresist layer patterns is measured and a proportional constant between the CD asymmetry and the eccentricity of the light source is obtained to abstract the eccentricity of the light source.