| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a surface mounting type semiconductor device wherein lateral resistance and inductance are small, a height and a thickness are low and thin, and a current capacity is comparatively large. <P>SOLUTION: In a part of a semiconductor region of low impurity concentration isolated from an active part like a diode or a MOSFET, one or more conducting path regions reaching a semiconductor substrate 1 of high impurity concentration from the surface of the part are formed. The active part is connected with the conducting path regions by using one or more conducting films for bridging. The surface mounting type semiconductor device is characterized by isolating the active part from the conducting path region by using a part of the semiconductor substrate which is positioned between the active part and the conducting path regions. <P>COPYRIGHT: (C)2004,JPO |
