MANUFACTURING METHOD FOR INSULATED GATE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of an insulated gate semiconductor device having superior characteristics.

SOLUTION: The manufacturing method of an insulated gate semiconductor device comprises the steps of: forming an amorphous semiconductor film on a glass substrate; forming a mask on the semiconductor film; doping an impurity into the selected portion of the semiconductor film by using the mask; and activating the impurity-doped portion of the semiconductor film through lamp annealing. The lamp annealing is conducted by irradiating the glass substrate with a light of 0.5μm to 4μm from above and from the backside.

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