| 发明名称 |
NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
PROBLEM TO BE SOLVED: To prevent data retardation failure of a non-volatile semiconductor memory device. SOLUTION: In the upper part of a memory cell region where a transistor array of the stack type gate structure including a stray gate is formed, a barrier including Ti covering the memory cell region is formed and a passivation layer is also formed at the upper part thereof. COPYRIGHT: (C)2004,JPO |
| 申请公布号 |
JP2003332468(A) |
申请公布日期 |
2003.11.21 |
| 申请号 |
JP20020134177 |
申请日期 |
2002.05.09 |
| 申请人 |
TOSHIBA CORP |
发明人 |
SAITO KAZUO;TAKAMURA SHOGO |
| 分类号 |
H01L23/52;H01L21/3205;H01L21/8247;H01L23/00;H01L23/532;H01L27/10;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824;H01L21/320 |
主分类号 |
H01L23/52 |
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