| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrically erasable programmable read only memory composed of single layer polycrystalline silicon having a simple structure and exhibiting advantages of high integration and power saving. SOLUTION: The electrically erasable programmable read only memory comprises a first PMOS transistor formed on the N type well in a P type substrate while including a floating gate electrode, a first P+ drain doping region, and a first P+ source doping region, a second PMOS transistor formed on the N type well in series connection with the first PMOS transistor while including a gate electrode, a second P+ source doping region and a drain electrode, and a erasure gate electrode formed in the P type substrate contiguously to he floating gate electrode. COPYRIGHT: (C)2004,JPO
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