| 摘要 |
PROBLEM TO BE SOLVED: To effectively prevent a leakage current between a common contact and a substrate, while increasing the absolute minimum number of processes. SOLUTION: This semiconductor device comprises second conductive type source/drain impurity regions 9 formed in the surface region of a first conductivity-type semiconductor 1, a first conductor 6 formed on the first conductivity-type semiconductor 1 interposing an insulating film, a second conductor (or a shared contact) 12 for electrically connecting the first conductor 6 with the source/drain impurity regions 9 overlapping the first conductor 6 and the source/drain impurity regions 9 in the adjacent region, and a contact impurity region 13 which is composed of the second conductivity-type semiconductor formed in the surface region of the first conductivity-type semiconductor 1, and formed between the second conductor 12 and the first conductivity-type semiconductor 1. COPYRIGHT: (C)2004,JPO
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