发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a means for securing flexural strength of an IC (chip) and for preventing a surface of a wafer from being oxidized (burnt) by mechanical grinding. SOLUTION: In the method of manufacturing the semiconductor device, a material with a fine grain size (#4,000) of abrasive particle constituting a grindstone having a short blade width (segment width) (2 mm) is used in a biaxial process for grinding the semiconductor wafer. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003332276(A) 申请公布日期 2003.11.21
申请号 JP20020137416 申请日期 2002.05.13
申请人 HITACHI CHEM CO LTD 发明人 SHIBUYA MASAHITO;ISHIZAKA HIRONOBU;KISE YOSHITAKA;HIROSE AKIRA
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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