| 摘要 |
PROBLEM TO BE SOLVED: To efficiently correct proximity effects in the course of charged particle beam exposure. SOLUTION: An exposure data size found from an exposure intensity distribution function or for manufacturing a device or mask (step S3) is collated with already existing mask data and a corrected exposure data size is decided based on the collated result (step S4). Then a designed size and strength are calculated by using the corrected exposure data size (step S5) and corrected exposure is calculated (step S8) by calculating a back scattering intensity (steps S6 and S7). Since the already existing mask data are used for deciding the corrected exposure data size in this way, the cost can be reduced and the development period can be shortened, because the need of remaking a mask is eliminated, even when the parameter of an EID function is changed following a change in a resist process. COPYRIGHT: (C)2004,JPO
|
