ANNEALING METHOD FOR ALD PROCESS FOR MANUFACTURING METAL INSULATOR METAL FIELD EMISSION DISPLAY

摘要

PURPOSE: An annealing method is provided to overcome an electrical weakness of the Al2O3 dielectric film by performing a post-annealing process on the Al2O3 dielectric film through the use of a low temperature remote plasma. CONSTITUTION: An annealing method comprises a step of depositing an Al2O3 dielectric film and annealing the Al2O3 dielectric film under the oxidative atmosphere using a remote plasma; and a step of depositing an upper electrode and performing an annealing process under a remote plasma atmosphere.