| 摘要 |
<p>A surface geometry for a MOS-gated device is provided that allows device size to be varied in both the x-axis and the y-axis by predetermined increments. The actual device size is set or 'programmed' by the metal and pad masks or the contact metal and pad masks. This approach saves both time and expense. A 7X9 array (11) of identical tiles (13) is shown.</p> |
