发明名称 |
ULTRA SMALL THIN WINDOWS IN FLOATING GATE TRANSISTORS DEFINED BY LOST NITRIDE SPACERS |
摘要 |
A tiny oxide window, the upper layers (55, 57) are etched leaving the poly-two layer (57) over the laywe (41). The optional nitride spacers (51, 53) remain as protective barriers for the poly-one layer and its underlying oxyde layer. Source and implants (22, 24) may be made using the ONO layer as a self-alignment tool.
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申请公布号 |
WO03096405(A1) |
申请公布日期 |
2003.11.20 |
申请号 |
WO2003US10789 |
申请日期 |
2003.04.04 |
申请人 |
ATMEL CORPORATION |
发明人 |
DAEMEN, ELEONORE;RENNINGER, ALAN, L.;LOJEK, BOHUMIL |
分类号 |
H01L21/28;H01L21/336;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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