| 摘要 |
Disclosed herein is a semiconductor device for producing laser light from an active layer. The semiconductor device includes a ridge-shaped mesa including the active layer, current block layers formed so as to bury both sides of the mesa, a diffusion block layer formed on the mesa and the current block layers so as to be concatenated, and a p-InP clad layer formed on the diffusion block layer and containing a predetermined impurity. It is possible to restrain a reduction in the resistance of each current block layer due to the diffusion of the impurity of the p-InP clad layer into the current block layers and realize a high-speed operation of a laser with a modulator.
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