发明名称 |
Method for manufacturing the storage node of a capacitor of a semiconductor device and a storage node manufactured by the method |
摘要 |
Methods for manufacturing a storage node of a capacitor of a semiconductor device and a storage node manufactured by these methods are provided. An exemplary method for manufacturing a storage node of a capacitor of a semiconductor device includes forming a mold layer on a semiconductor substrate, forming a mold for the storage node by patterning the mold layer by a photolithography process, introducing a photomask which includes a plurality of light transmitting patterns separated from each other and which define the region to be occupied by the storage node, and forming a storage node that has the shape formed by the mold. The photolithography process is performed with the occurrence of a pattern bridge phenomenon, e.g., the transferred light transmitting patterns are connected to each other in a pattern transferred from the light transmitting patterns to the mold.
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申请公布号 |
US2003215983(A1) |
申请公布日期 |
2003.11.20 |
申请号 |
US20020329488 |
申请日期 |
2002.12.27 |
申请人 |
BAE DONG-IL;SHIN DONG-WON;LEE SANG-HYEON |
发明人 |
BAE DONG-IL;SHIN DONG-WON;LEE SANG-HYEON |
分类号 |
H01L27/108;H01L21/02;H01L21/44;H01L21/8242;(IPC1-7):H01L21/44 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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