Wordline pulldown circuit

摘要

A circuit and method of operation for pulldown of a wordline in a DRAM (dynamic random access memory) are revealed. The circuit adds a transistor at the far end (top) of each wordline (row) in a DRAM, in addition to a transistor already at the near end (bottom) of each row. An inverter driven by a pulse generator drives the transistors at the top of each wordline, bringing them low in about half the time as a present precharge operation requires.