发明名称 Solid-state imaging device and manufacturing method for solid-state imaging device
摘要 A solid-state imaging device, comprises: a semi-conductor substrate demarcating a two-dimensional surface; a multiplicity of photoelectric conversion units formed being arranged in a plurality of rows and columns on the semiconductor substrate; a planarizing insulating film formed above the semiconductor substrate; and a plurality of gap-less microlenses having spectral characters, each gap-less microlens being formed above each of the photoelectric conversion units with the planarizing insulating film placed in-between.
申请公布号 US2003215967(A1) 申请公布日期 2003.11.20
申请号 US20030434109 申请日期 2003.05.09
申请人 FUJI PHOTO FILM CO., LTD. 发明人 SHIZUKUISHI MAKOTO
分类号 G02B5/00;G02B3/00;G02B5/20;H01L21/00;H01L27/14;H04N5/335;H04N5/369;(IPC1-7):H01L21/00 主分类号 G02B5/00
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