发明名称 |
Solid-state imaging device and manufacturing method for solid-state imaging device |
摘要 |
A solid-state imaging device, comprises: a semi-conductor substrate demarcating a two-dimensional surface; a multiplicity of photoelectric conversion units formed being arranged in a plurality of rows and columns on the semiconductor substrate; a planarizing insulating film formed above the semiconductor substrate; and a plurality of gap-less microlenses having spectral characters, each gap-less microlens being formed above each of the photoelectric conversion units with the planarizing insulating film placed in-between.
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申请公布号 |
US2003215967(A1) |
申请公布日期 |
2003.11.20 |
申请号 |
US20030434109 |
申请日期 |
2003.05.09 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
SHIZUKUISHI MAKOTO |
分类号 |
G02B5/00;G02B3/00;G02B5/20;H01L21/00;H01L27/14;H04N5/335;H04N5/369;(IPC1-7):H01L21/00 |
主分类号 |
G02B5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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