发明名称 Zuführungsdraht-Rahmen zur Verwendung bei der Herstellung einer Halbleitervorrichtung mit LOC-Struktur und Verfahren zum Herstellen einer Halbleitervorrichtung mit LOC-Struktur
摘要 The device includes a semiconductor component (2) having electrodes (4) formed on one of a pair of surfaces, and supported by a support plate (1). A brazing solder with no moisture absorption is formed on the other surface and is fixed to the support plate. Multiple leads (3) have an inner section, which extends above the semiconductor component, and a connected outer section, which extends outside the component. The inner sections of the leads are connected to corresponding electrodes by thin metal wires (5). The above parts are sealed in a housing (6) with the outer sections of the leads extending outwards. A lead frame is also claimed.
申请公布号 DE4345301(C2) 申请公布日期 2003.11.20
申请号 DE19934345301 申请日期 1993.06.04
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO 发明人 TOMITA, YOSHIHIRO;UEDA, NAOTO;NISHINAKA, YOSHIROU;ABE, SHUNICHI;ICHIYAMA, HIDEYUKI
分类号 H01L21/56;H01L21/60;H01L23/495 主分类号 H01L21/56
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