| 摘要 |
<p>A method for activating a first ionic species implanted in a semiconductor, including annealing the semiconductor using a controlled diffusion annealing, and controlling the oxygen content during the annealing to redistribute the first ionic species such that the abruptness of the implanted profile is increased after the annealing. Also, a method is provided for forming a junction in a semiconductor, including implanting a first ionic species in the semiconductor, post-implanting at least one second ionic species where the at least one second ionic species includes at least one of an atomic weight and a molecular weight that is substantially the same or greater than at least one of the first ionic species, atomic weight and molecular weight, and, annealing the semiconductor using a controlled diffusion annealing, where the abruptness of the profile is decreased after annealing such that the junction dimensions are minimized with respect to the junction dimensions of the as-implanted profile of the first ionic species.</p> |
