| 摘要 |
<p>Bit lines (51) and word lines (50) nonparallel to one other are so arranged as to cross, and a magnetoresistance element (52) serving as the storage element is arranged between a bit line and a word line at their intersection. Numeral 106 represents an upper electrode. The magnetoresistance element comprises a free magnetic layer the magnetization direction of which changes with the direction of a current flowing through the bit line at the intersection. The free magnetic layer is located close to the top face of the magnetoresistance element. The distance from the free magnetic layer to the bit line is larger than that from the free magnetic layer to the word line. The width of the word line is smaller than that of the bit line. The bit lines and the word lines are arranged at their respective predetermined repetition pitches. The repetition pitches of the bit lines are larger than those of the word lines.</p> |
