Halbleiter-IC-Vorrichtung und deren Herstellungsverfahren

摘要

A plurality of cells (5) providing constituent elements for a semiconductor integrated circuit are provided in and on a major surface of a semiconductor substrate (31) of a semiconductor integrated circuit chip (20). A plurality of wires are each provided between a cell (5) and a cell (5) to provide cell-to-cell wires (8). A plurality of dummy wires (4) are connected to an internal power source terminal (7) of a second power source potential (VSS) which is different from a first power source terminal (VDD). A capacitance (C) is created between the dummy wire (4) and the semiconductor substrate to prevent a voltage fluctuation at the power source. The dummy wires (4) are selectively cut off the internal power source terminal of the second potential (VSS) to correct a wrong connection line or a signal delay time.