| 摘要 |
PURPOSE: A manufacturing method of a semiconductor device is provided to reduce void on a wire caused by etching process using a series of Cl gas as an etching gas so that reliance of the device is improved. CONSTITUTION: An oxide layer(11) is deposited on a substrate(10). A photoresist pattern is formed on the layer after a metal layer(120) such as aluminum or aluminum alloy is deposited on the oxide layer by sputtering method. An incomplete metal layer pattern is formed through main etching process, etching the part of metal layer not covered by photoresist pattern using a series of Cl gas as a main gas together with Ar gas as a minor gas at a ratio of 1 to 0.5 or 1 to 1. A metal layer pattern is completed by excessive etching process using the mixed gas employed for main etching process at a ratio of 1 to 1 or 1 to 3.
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