| 摘要 |
PURPOSE: A method for forming a metal layer of a semiconductor is provided to reduce a fabricating cost and simplify a fabricating process by forming a copper seed layer and a copper electrolytic layer within the same reactor. CONSTITUTION: A surface of a substrate(100) having a structure of titanium nitride/titanium/silicon(130,120,110) is activated by removing a titanium oxide layer from the substrate. A metal seed layer(140) is formed on the surface of the substrate by dipping an electroless plating solution including metallic salt, reducing agent for reducing metal ions, and pH control agent for controlling pH of the reducing agent. An electrolytic metal layer(150) is formed by applying the reducing electric potential to the substrate formed with electroless metal layer. The metal layer is formed with Cu, Ni, Au, and Pt.
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