发明名称 |
Semiconductor integrated circuit having anti-fuse, method of fabricating, and method of writing data in the same |
摘要 |
A semiconductor integrated contains a first MOS transistor of a first conductivity type formed on a surface of a semiconductor substrate, and a second MOS transistor of the first conductivity type having a drain-source breakdown voltage lower than that of the first MOS transistor. The second MOS transistor is used as an anti-fuse, which can be changed to a conductive state with a low writing voltage that does not damage the first MOS transistor. The second MOS transistor is fabricated such that a concentration of a second conductivity type impurity in at least a portion of the channel region adjacent to the drain region is higher than that in a corresponding portion of the first MOS transistor.
|
申请公布号 |
US2003214014(A1) |
申请公布日期 |
2003.11.20 |
申请号 |
US20030461494 |
申请日期 |
2003.06.16 |
申请人 |
KAWASAKI MICROELECTRONICS, INC. |
发明人 |
ARIYOSHI RYUJI;KUNO ISAMU;FUKUSHIMA TAKAHITO;AOIKE JUNJI |
分类号 |
H01L21/8234;H01L23/525;H01L27/088;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/8234 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|