Reading data with specific burst length out of semiconductor memory takes over first address part from memory cell address bus and transmits read-out instruction to instruction bus of memory

摘要

The read-out process for data with burst length (BL) exceeding two from a semiconductor memory starts with taking over first address part (AR10) of memory cell address bus (ADR) of memory at a time point (t0). Then a read-on instruction (R1) is transmitted to instruction bus (CMD) of memory to initiate of read-out access at memory cells at time point (C1), later than (C0). Then a second address part (AR11) is taken over for memory cell addressing at L1 time point from address bus. Finally data, allocated to addressed cells, are transmitted to memory data bus (daten) at a time point (t2), later then t2.