发明名称 Power semiconductor device
摘要 A power semiconductor device that uses a lead frame for making connection to a semiconductor device and has a structure less subject to fatigue failure at the connection part of the lead frame. A mold resin of a casing (14) is used for integrally covering the lead frame (6, 7, 13), semiconductor device (1), and metal block (15) serving as a substrate mounting the semiconductor device (1). The mold resin surrounding the lead frame (6) and semiconductor device (1) strengthens the joint therebetween, resulting in the power semiconductor device less subject to fatigue failure at the connection part of the lead frame (6).
申请公布号 US2003213979(A1) 申请公布日期 2003.11.20
申请号 US20030383650 申请日期 2003.03.10
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 NAKAJIMA DAI;KASHIBA YOSHIHIRO;CHUMA HIDEAKI
分类号 H01L23/48;H01L23/427;H01L23/433;H01L23/495;(IPC1-7):H01L31/072 主分类号 H01L23/48
代理机构 代理人
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